1N4139 [BL Galaxy Electrical]
PLASTIC SILICON RECTIFIER; 塑料硅整流
| 型号： | 1N4139 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | PLASTIC SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
1N4139 - - -1N4146
BL
VOLTAGE RANGE: 50 --- 1200 V
CURRENT: 3.0 A
PLASTIC SILICON RECTIFIER
FEATURES
Low cost
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Free, Alcohol, Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4140
1N
4139
1N
1N
1N
1N
1N
1N
UNITS
4141 4142 4143 4144 4145 4146
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000 1200
700 840
1000 1200
Maximum DC blocking voltage
100
Maximum average forward rectified current
A
A
V
3.0
IF(AV)
IFSM
VF
9.5mm lead length,
@TA=75
Peak forward surge current
10ms single half-sine-wave
300.0
1.0
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage
@ 3.0 A
Maximum reverse current
@TA=25
10.0
100.0
A
IR
at rated DC blocking voltage @TA=100
pF
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
35
CJ
/
20
W
R
JA
Operating junction temperature range
Storage temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
TSTG
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Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2.Thermal resistance f rom junction to ambient.
Document Number 0260008
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1N4139---1N4146
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
10
100
60
40
f=1MHz
TJ=25
1.0
20
10
TJ=250 C
Pulse Width
=300us
4
0.1
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
.01
0.4
0.6
0.8 1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
FIG.3 -- PEAK FORWARD SURGE CURRENT
FIG.4 -- FORWARD DEATING CURVE
400
300
4
3
℃
TJ=125
8.3ms Single Half
Sine-Wave
2
200
100
0
Single Phase
Half Wave 60H
Resistive or
Inductive Load
Z
1
0
0
25
50
75
100
125
150
1
2
4
8
10
20
40 60 80 100
NUMBEROF CYCLES AT60Hz
AMBIENTTEMPERATURE,
www.galaxycn.com
2.
Document Number 0260008
BLGALAXY ELECTRICAL
相关型号：
1N413BRE3
Rectifier Diode, 1 Phase, 1 Element, 100A, 200V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1 PIN
MICROSEMI
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